ACS120-7SFP |
RFQ for ACS120-7SFP Required Field |
 |
| Technical/Catalog Information | ACS120-7SFP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Triac Type | Logic - Sensitive Gate |
| Configuration | Single |
| Voltage - Off State | 700V |
| Current - On State (It (RMS) (Max) | 2A |
| Voltage - Gate Trigger (Vgt) (Max) | 1V |
| Current - Gate Trigger (Igt) (Max) | 10mA |
| Current - Hold (Ih) (Max) | 45mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 20A, 11A |
| Mounting Type | Through Hole |
| Package / Case | TO-220FPAB |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ACS120 7SFP ACS1207SFP 497 3815 5 ND 49738155ND 497-3815-5 |
| Product | Manufacturers | Pack | D/C |
| ACS120-7SFP | - | 07+ | - |
The ACS120 belongs to the AC line switch family built around the ASD™ concept. This high performance switch circuit is able to control a load up to 2 A.
The ACS™ switch embeds a high voltage clamping structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin.
Typical Application |
Features |
| ·AC static switching in appliance control systems·Drive of low power high inductive or resistive loads like- relay, valve, solenoid, dispenser- pump, fan, micro-motor- defrost heater | `Blocking voltage : VDRM / VRRM = +/-700V`Avalanche controlled : VCL typ = 1100 V`Nominal conducting current : IT(RMS) = 2A`Gate triggering current : IGT< 10 mA`Switch integrated driver`High noise immunity : static dV/dt >500V/s |
|
Symbol |
Parameter |
Value |
Unit | ||
|
VDRM /VRRM |
Repetitive peak off-state voltage |
Tj = 10 °C |
700 |
V | |
|
IT(RMS) |
RMS on-state current full cycle sine wave 50 to 60 Hz | DPAK |
Tc = 115 °C |
2 |
A |
| TO-220FPAB |
Tc = °C |
2 |
A | ||
| TO-220AB |
Tc = 115 °C |
2 |
A | ||
|
ITSM |
Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave |
F =50 Hz |
20 |
A | |
|
F =60 Hz |
11 |
A | |||
|
I2t |
Fusing capability |
tp = 10ms |
2.2 |
A2s | |
|
dI/dt |
Critical rate of rise of
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